MA3D798 查看數據表（PDF） - Panasonic Corporation

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MA3D798

Schottky Barrier Diodes (SBD)

Panasonic Corporation 

Schottky Barrier Diodes (SBD)

MA3D798

Silicon epitaxial planar type (cathode common)

For switching power supply

9.9 ± 0.3

Unit : mm

4.6 ± 0.2

2.9 ± 0.2

I Features

• TO-220D package

• Allowing to rectify under (IF(AV) = 20 A) condition

• Cathode common dual type

• Low VF (forward voltage) type: VF < 0.47 V (at IF = 10 A)

I Absolute Maximum Ratings Ta = 25°C

Parameter

Symbol

Rating

Unit

Repetitive peak reverse voltage VRRM

30

V

Average forward current

IF(AV)

20

A

Non-repetitive peak forward

IFSM

120

A

surge current*

Junction temperature

Storage temperature

Tj

−40 to +125

°C

Tstg

−40 to +125

°C

Note) * : Half sine-wave; 10 ms/cycle

φ 3.2 ± 0.1

1.4 ± 0.2

1.6 ± 0.2

0.8 ± 0.1

2.54 ± 0.3

1 2 3 5.08 ± 0.5

2.6 ± 0.1

0.55 ± 0.15

1 : Anode

2 : Cathode (common)

3 : Anode

TO-220D package

I Electrical Characteristics Ta = 25°C

Parameter

Symbol

Conditions

Min Typ Max Unit

Reverse current (DC)

Forward voltage (DC)

IR

VR = 30 V

VF

IF = 10 A

5

mA

0.47

V

High voltage rectification

Rth(j-c)

Direct current (between junction and case)

3 °C/W

Note) Rated input/output frequency: 150 MHz

1

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