MA3X158 查看數據表（PDF） - Panasonic Corporation

零件编号

产品描述 (功能)

生产厂家

MA3X158

Silicon epitaxial planar type

Panasonic Corporation 

This product complies with the RoHS Directive (EU 2002/95/EC).

Switching Diodes

MA3X158 (MA158)

Silicon epitaxial planar type

For small power rectification and surge absorption

■ Features

• High reverse voltage VR

• Large forward current (Average) IF(AV)

• Automatic mounting is possible

■ Absolute Maximum Ratings Ta = 25°C

Parameter

Symbol Rating

Unit

Reverse voltage

VR

200

V

Repetitive peak reverse voltage VRRM

250

V

Non-repetitive peak reverse

VRSM

300

V

surge voltage

Output current

IO

100

mA

Repetitive peak forward current

IFRM

225

mA

Non-repetitive peak forward

IFSM

500

mA

surge current*

Junction temperature

Storage temperature

Tj

125

°C

Tstg

−55 to +125

°C

Note) *: t = 1 s

0.40+–00..0150

3

1

2

(0.95) (0.95)

1.9±0.1

2.90+–00..0250

10˚

Unit: mm

0.16+–00..0160

EIAJ: SC-59

1: Anode

2: N.C.

3: Cathode

Mini3-G1 Package

Marking Symbol: M1C

Internal Connection

3

■ Electrical Characteristics Ta = 25°C ± 3°C

1

2

Parameter

Symbol

Conditions

Min Typ Max Unit

Forward voltage

Reverse current

VF

IF = 100 mA

IR

VR = 200 V

1.3

V

1.0

µA

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 3 MHz.

Publication date: March 2004

Note) The part number in the parenthesis shows conventional part number.

SKF00039CED

1

Share Link: