MA3X704D 查看數據表（PDF） - Panasonic Corporation
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MA3X704D Datasheet PDF : 3 Pages
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Schottky Barrier Diodes (SBD)
MA3X704D, MA3X704E (MA704WA, MA704WK)
Silicon epitaxial planar type
For switching
For wave detection
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
s Features
• Two MA3X704A (MA704A) is contained in one package
• Low forward voltage VF and good wave detection efficiency η
• Small temperature coefficient of forward characteristic
• Small reverse current IR
• Mini type 3-pin package
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
s Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak reverse voltage Single
IFM
150
mA
Double *
110
Forward current (DC) Single
IF
Double *
30
mA
20
Junction temperature
Storage temperature
Tj
125
°C
Tstg
−55 to +125
°C
Note) *: Value per chip
EIAJ: SC-59
Mini3-G1 Package
MA3X704D MA3X704E
1 Cathode Anode
2 Cathode Anode
3 Anode Cathode
Marking Symbol
• MA3X704D: M2P • MA3X704E: M2R
Internal Connection
3
3
s Electrical Characteristics Ta = 25°C
1
2
D
1
2
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
Detection efficiency
IR
VR = 30 V
VF1
IF = 1 mA
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
η
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
1
µA
0.4
V
1.0
1.5
pF
1.0
ns
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Ri = 50 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2002
SKH00074BED
1
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