MA700 查看數據表（PDF） - Semtech Electronics LTD.
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MA700 Datasheet PDF : 1 Pages
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MA700, MA700A
SILICON EPITAXIAL PLANAR TYPE
SCHOTTKY BARRIER DIODES
for ordinary wave detection
for super high speed switching
Features
• Low forward rise voltage (VF) and satisfactory wave
• detection efficiency (η)
• Small temperature coefficient of forward characteristic
• Extremely low reverse current (IR)
Max. 0.45
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX Max. 2.9
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Min. 27.5
Glass Case DO-34
Dimensions in mm
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Forward Current
Peak Forward Current
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
MA700
15
MA700A
VRM
30
V
MA700
15
MA700A
VR
30
V
IF
30
mA
IFM
150
mA
Tj
125
OC
TS
- 55 to + 125
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
Typ.
Max.
Unit
Forward Voltage
at IF = 1 mA
at IF = 30 mA
Reverse Current
at VR = 15 V
at VR = 30 V
VF
MA700
IR
MA700A
-
0.4
V
-
1
-
600
nA
-
600
Terminal Capacitance
at VR = 1 V, f = 1 MHz
CT
1.3
-
pF
Reverse Recovery Time
at IF = IR = 10 mA, Irr = 1 mA, RL = 100 Ω
trr
1
-
ns
Detection Efficiency
at Vin = 3 V(peak), f = 30 MHz, RL = 3.9 KΩ, CL = 10 pF
η
60
-
%
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/08/2007
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