MAC4DCM MAC4DCN
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristics
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25°C
TJ = 125°C
Peak On–State Voltage (1)
(ITM = ± 6.0 A)
W Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 )
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
W Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 )
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
TJ = 125°C
Holding Current
(VD = 12 V, Gate Open, IT = ± 200 mA)
Latching Current (VD = 12 V, IG = 35 mA)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
DYNAMIC CHARACTERISTICS
Characteristics
Rate of Change of Commutating Current (1)
m (VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/ sec, Gate Open,
m TJ = 125°C, f = 250 Hz, CL = 5.0 F, LL = 20 mH, No Snubber)
See Figure 15
Critical Rate of Rise of Off–State Voltage
(VD = 0.67 X Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
(1) Pulse test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
Symbol
IDRM
VTM
IGT
VGT
IH
IL
Symbol
di/dt(c)
dv/dt
Min
Typ
Max
Unit
mA
—
—
0.01
—
—
2.0
Volts
—
1.3
1.6
mA
8.0
12
35
8.0
18
35
8.0
22
35
Volts
0.5
0.8
1.3
0.5
0.8
1.3
0.5
0.8
1.3
0.2
0.4
—
mA
6.0
22
35
mA
—
30
60
—
50
80
—
20
60
Min
Typ
Max
Unit
A/ms
6.0
8.4
—
V/ms
500
1700
—
2
Motorola Thyristor Device Data