MAC4DCM(2009) 查看數據表（PDF） - ON Semiconductor
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MAC4DCM Datasheet PDF : 8 Pages
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MAC4DCM, MAC4DCN
60
50
40
MT2 POSITIVE
30
20
MT2 NEGATIVE
10
0
-50 -25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
120
100
Q2
80
60
Q1
40
Q3
20
0
-50 -25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Latching Current versus
Junction Temperature
10 K
8.0 K
6.0 K
VPK = 400 V
600 V
4.0 K 800 V
2.0 K
TJ = 125°C
15 K
VPK = 400 V
10 K
600 V
800 V
5.0 K
TJ = 125°C
0
100
1000
10 K
RG-MT1, GATE-MT1 RESISTANCE (OHMS)
Figure 9. Exponential Static dv/dt versus
Gate−MT1 Resistance, MT2(+)
0
100
1000
10 K
RG-MT1, GATE-MT1 RESISTANCE (OHMS)
Figure 10. Exponential Static dv/dt versus
Gate−MT1 Resistance, MT2(−)
10 K
14 K
8.0 K
TJ = 100°C
GATE OPEN
6.0 K
110°C
4.0 K
125°C
2.0 K
0
400
500
600
700
800
VPK, PEAK VOLTAGE (VOLTS)
Figure 11. Exponential Static dv/dt versus
Peak Voltage, MT2(+)
12 K
10 K
TJ = 100°C
GATE OPEN
8.0 K
110°C
6.0 K
4.0 K
125°C
2.0 K
0
400
500
600
700
800
VPK, PEAK VOLTAGE (VOLTS)
Figure 12. Exponential Static dv/dt versus
Peak Voltage, MT2(−)
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