MAC4DSM 查看數據表（PDF） - ON Semiconductor
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MAC4DSM Datasheet PDF : 8 Pages
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MAC4DSM, MAC4DSN
14
12
10
MT2 NEGATIVE
8.0
6.0 MT2 POSITIVE
4.0
2.0
0
−50 −25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
25
Q2
20
Q1
15
Q3
10
5.0
0
−50 −25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Latching Current versus
Junction Temperature
1000
TJ = 125°C
800
600
400
VPK = 400 V
600 V
200
800 V
0
100
1000
10 k
RG−MT1, GATE−MT1 RESISTANCE (OHMS)
Figure 9. Exponential Static dv/dt versus
Gate−MT1 Resistance, MT2(+)
1200
1000
VPK = 400 V
TJ = 125°C
800
600
400 600 V
200
800 V
0
100
1000
10 k
RG−MT1, GATE−MT1 RESISTANCE (OHMS)
Figure 10. Exponential Static dv/dt versus
Gate−MT1 Resistance, MT2(−)
800
2000
600
400
110°C
125°C
200
TJ = 100°C
GATE OPEN
1600
TJ = 100°C
1200
800
125°C
110°C
400
GATE OPEN
0
400
500
600
700
800
VPK, PEAK VOLTAGE (VOLTS)
Figure 11. Exponential Static dv/dt versus
Peak Voltage, MT2(+)
0
400
500
600
700
800
VPK, PEAK VOLTAGE (VOLTS)
Figure 12. Exponential Static dv/dt versus
Peak Voltage, MT2(−)
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