MAC4DSM 查看數據表（PDF） - ON Semiconductor
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MAC4DSM Datasheet PDF : 8 Pages
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MAC4DSM, MAC4DSN
800
600
VPK = 400 V
GATE OPEN
400
600 V
200
800 V
0
100
105
110
115
120
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(+)
1600
1400
1200 VPK = 400 V
GATE OPEN
1000
800
600 V
600
400
200
800 V
0
100
105
110
115
120
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 14. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(−)
100
VPK = 400 V
TJ = 125°C 100°C
75°C
10
tw
VDRM
1
f=
2 tw
(di/dt)c
=
6f ITM
1000
1.0
0
5.0
10
15
20
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 15. Critical Rate of Rise of
Commutating Voltage
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
TRIGGER
CHARGE
CHARGE
CONTROL
NON-POLAR
CL
LL
MEASURE
I
MT2
1N914 51 W
MT1
G
1N4007
−
200 V
+
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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