MAC8S 查看數據表（PDF） - Motorola => Freescale
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MAC8S Datasheet PDF : 8 Pages
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MAC8S SERIES
200
180
160
VPK = 400V
130
TJ = 110°C
120
W RG – MT1 = 510
TJ = 100°C
140
110
600V
800V
120
100
110°C
100
90
80
120°C
60
100 200 300 400 500 600 700 800 900 1000
RGK, GATE–MT1 RESISTANCE (OHMS)
Figure 9.0 Typical Exponential Static dv/dt Versus
Gate–MT1 Resistance, MT2(+)
80
400 450
500 550 600 650 700
VPK, Peak Voltage (Volts)
750 800
Figure 10.0 Typical Exponential Static dv/dt Versus
Peak Voltage, MT2(+)
130
350
120
VPK = 400V
110
100
600V
90
W 80 RG – MT1 = 510
800V
70100
105
110
115
120
125
TJ, Junction Temperature (°C)
Figure 11.0 Typical Exponential Static dv/dt Versus
Junction Temperature, MT2(+)
300
250
200
W 150 RG – MT1 = 510
TJ = 100°C
110°C
120°C
100
400 450 500 550 600 650 700 750 800
VPK, Peak Voltage (Volts)
Figure 12.0 Typical Exponential Static dv/dt Versus
Peak Voltage, MT2(–)
350
300
250
VPK = 400V
600V
200
800V
150
W 100 RG – MT1 = 510
50
100
105
110
115
120
125
TJ, Junction Temperature (°C)
Figure 13.0 Typical Exponential Static dv/dt Versus
Junction Temperature, MT2(–)
300
VPK = 400V
250
600V
200
800V
150
TJ = 110°C
100
100 200 300 400 500 600 700 800 900 1000
RGK, GATE–MT1 RESISTANCE (OHMS)
Figure 14.0 Typical Exponential Static dv/dt Versus
Gate–MT1 Resistance, MT2(–)
Data Sheets
4
Motorola Thyristor Device Data
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