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MAC9D 查看數據表(PDF) - ON Semiconductor

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MAC9D Datasheet PDF : 6 Pages
1 2 3 4 5 6
MAC9D, MAC9M, MAC9N
100
Q2
Q3
Q1
10
−150 −30 −10 10 30 50 70 90 110 130
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Trigger Current Variation
1
0.95
0.9
0.85
Q3
0.8
0.75
Q1
0.7
Q2
0.65
0.6
0.55
0.5
0.45
0.4
−50 −30 − 10 10 30 50 70 90 110 130
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Gate Trigger Voltage Variation
5000
4.5K
4K
3.5K
3K
MT2 NEGATIVE
2.5K
2K
1.5K
1K
500
MT2 POSITIVE
0
1
10
100
1000
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential)
100
TJ = 125°C
10
100°C
75°C
tw
VDRM
1
f=
2 tw
(di/dt)c
=
6f ITM
1000
1
10 15 20 25 30 35 40 45 50 55 60
(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 9. Critical Rate of Rise of
Commutating Voltage
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
TRIGGER
CHARGE
CHARGE
CONTROL
NON-POLAR
CL
LL
MEASURE
I
MT2
1N914 51 W
MT1
G
1N4007
200 V
+
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
http://onsemi.com
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