MAC8SM(2000) 查看數據表（PDF） - ON Semiconductor
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MAC8SM Datasheet PDF : 8 Pages
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MAC8SD, MAC8SM, MAC8SN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
RθJC
RθJA
TL
Value
2.2
62.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
IDRM,
TJ = 25°C
IRRM
—
—
TJ = 110°C
—
—
ON CHARACTERISTICS
Peak On-State Voltage* (ITM = 11A)
VTM
—
—
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
Holding Current (VD = 12V, Gate Open, Initiating Current = 150mA)
IGT
.8
2.0
.8
3.0
.8
3.0
IH
1.0
3.0
Latching Current (VD = 24V, IG = 5mA)
MT2(+), G(+)
MT2(–), G(–)
MT2(+), G(–)
IL
2.0
5.0
2.0
10
2.0
5.0
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
VGT
0.45
0.62
0.45
0.60
0.45
0.65
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V m/sec,
W Gate Open, TJ = 110_C, f = 500 Hz, Snubber: CS = 0.01 mF,
RS =15 , See Figure 16.)
di/dt(c)
8.0
10
Critical Rate of Rise of Off-State Voltage
dv/dt
25
75
W (VD = Rate VDRM, Exponential Waveform, RGK = 510 , TJ = 110_C)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
Max
Unit
mA
0.01
2.0
1.85
Volts
mA
5.0
5.0
5.0
10
mA
mA
15
20
15
Volts
1.5
1.5
1.5
—
A/ms
—
V/ms
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