MAC8SMG 查看數據表（PDF） - ON Semiconductor

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MAC8SMG

Sensitive Gate Triacs Silicon Bidirectional Thyristors

ON Semiconductor 

MAC8SD, MAC8SM, MAC8SN

350

300

300

VPK = 400 V

250

600 V

200

800 V

150

RG − MT1 = 510 W

100

50

100

105

110

TJ, Junction Temperature (°C)

Figure 13. Typical Exponential Static dv/dt Versus

Junction Temperature, MT2(−)

VPK = 400 V

250

600 V

200

800 V

150

TJ = 110°C

100

100 200

300 400 500 600 700 800

RGK, GATE−MT1 RESISTANCE (OHMS)

900 1000

Figure 14. Typical Exponential Static dv/dt Versus

Gate−MT1 Resistance, MT2(−)

100

VPK = 400 V

90°C

10

tw

VDRM

1

f = 2 tw

(di/dt)c =

6f ITM

1000

110°C

100°C

1

1

5

10

15

20

25

30

(di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 15. Critical Rate of Rise of

Commutating Voltage

200 VRMS

ADJUST FOR

ITM, 60 Hz VAC

TRIGGER

CHARGE

CHARGE

CONTROL

NON-POLAR

CL

LL

MEASURE

I

RS

1N4007

CS

MT2

1N914 51 W

MT1

G

−

ADJUST FOR +

di/dt(c)

200 V

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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