DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MASW-007587 查看數據表(PDF) - M/A-COM Technology Solutions, Inc.

零件编号
产品描述 (功能)
生产厂家
MASW-007587
MA-COM
M/A-COM Technology Solutions, Inc. MA-COM
MASW-007587 Datasheet PDF : 6 Pages
1 2 3 4 5 6
MASW-007587
High Power GaAs DPDT Diversity Switch
DC - 4.0 GHz
Evaluation Board for 3 mm 12-Lead PQFN
C4
C3
Rev. V1
C1
C2
Absolute Maximum Ratings 5,6
Parameter
Absolute
Maximum
Input Power @ 3 V Control
+35 dBm CW
Input Power @ 5 V Control
+37 dBm CW
Voltage
Operating Temperature
8 volts
-40°C to +85°C
Storage Temperature
-65°C to +150°C
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. M/A-COM does not recommend sustained operation near
these survivability limits.
Application Schematic
C1 = C2 = C3 = C4 = 39 pF
C1
C2
GND
GND
Vc1
C4 C3
GND
GND
Vc2
U1
Truth Table 7,8
Control
VC1
1
Control
VC2
0
ANT 1 ANT 1 ANT 2 ANT 2
- Rx - Tx - Tx - Rx
On
Off
On
Off
0
1
Off
On
Off
On
7. Differential voltage, V (state 1) - V (state 0), must be
+2.7 V minimum and must not exceed 8.0 V.
8. 1 = +2.9 V to +8 V, 0 = 0 V + 0.2 V.
Qualification
Qualified to M/A-COM specification REL-201,
Process Flow 2.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]