MASW-008853
GaAs SPDT 2.7 V High Power Switch
DC - 5.0 GHz
Electrical Specifications: TA = 25°C, VC = 0 V/2.7 V, Z0 = 50 Ω 5
Parameter
Test Conditions
Units Min.
Insertion Loss6
1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
dB
—
dB
—
dB
—
dB
—
dB
—
Isolation
1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
dB
23
dB
—
dB
—
dB
—
dB
—
Return Loss
DC – 3 GHz
dB
—
IP3
825 MHz
Two Tone, +24 dBm Total Pin, 5 MHz Spacing
dBm
—
Rev. V2
Typ.
0.30
0.36
0.45
0.70
1.10
25
19
15
13
11
20
56
Max.
0.65
—
—
—
—
—
—
—
—
—
—
—
Two-tone signal input: Tx1 = +22 dBm @ 820 MHz,
Tx2 = +22 dBm @ 821 MHz,
dBm
—
RX interfere = -23 dBm @ 869 MHz
Cross Modulation
Two-tone signal input: Tx1 = +18 dBm @ 1880 MHz,
Tx2 = +18 dBm @ 1881 MHz,
dBm
—
RX interfere = -23 dBm @ 1960 MHz
-99
—
-94
—
P0.1dB
1 GHz
dBm
—
38
—
Trise, Tfall
10% to 90% RF, 90% to 10% RF
nS
—
70
—
Ton, Toff
50% control to 90% RF,
50% control to 10% RF
nS
—
100
—
Transients
In Band
mV
—
25
—
Control Current
VC = 2.7 V
µA
—
5
20
5. For positive voltage control, external DC blocking capacitors are required on all RF ports.
6. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 1 GHz, 39 pF for 0.5 GHz - 3 GHz.
Truth Table 7,8,9
V1
V2
ANT– RF1 ANT - RF2
Qualification
Qualified to M/A-COM specification REL-201,
Process Flow –2.
1
0
On
Off
0
1
Off
On
7. For positive voltage control, external DC blocking capacitors
are required on all RF ports.
8. Differential voltage, V(state 1) - V(state 0), must be +2.7 V
minimum, but must not exceed 8.5 V.
9. 0 = -5 V to +2.3 V, 1 = -2.3 V to +5 V.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
2
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