MAT01N 查看數據表（PDF） - Analog Devices

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MAT01N

Matched Monolithic Dual Transistor

Analog Devices 

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FEATURES

Low VOS (VBE Match): 40 ␮V typ, 100 ␮V max

Low TCVOS: 0.5 ␮V/؇C max

High hFE: 500 min

Excellent hFE Linearity from 10 nA to 10 mA

Low Noise Voltage: 0.23 ␮V p-p—0.1 Hz to 10 Hz

High Breakdown: 45 V min

Available in Die Form

PRODUCT DESCRIPTION

The MAT01 is a monolithic dual NPN transistor. An exclusive

Silicon Nitride “Triple-Passivation” process provides excellent

stability of critical parameters over both temperature and time.

Matching characteristics include offset voltage of 40 µV, tem-

perature drift of 0.15 µV/°C, and hFE matching of 0.7%. Very

high hFE is provided over a six decade range of collector current,

including an exceptional hFE of 590 at a collector current of only

10 nA. The high gain at low collector current makes the

MAT01 ideal for use in low power, low level input stages.

Matched Monolithic

Dual Transistor

MAT01

PIN CONNECTION

TO-78

(H Suffix)

NOTE: Substrate is connected to case.

BURN-IN CIRCUIT

REV. A

Information furnished by Analog Devices is believed to be accurate and

reliable. However, no responsibility is assumed by Analog Devices for its

use, nor for any infringements of patents or other rights of third parties

which may result from its use. No license is granted by implication or

otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 617/329-4700

World Wide Web Site: http://www.analog.com

Fax: 617/326-8703

© Analog Devices, Inc., 1997

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