MAT01N 查看數據表（PDF） - Analog Devices
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MAT01N Datasheet PDF : 8 Pages
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MAT01
TYPICAL ELECTRICAL CHARACTERISTICS (@ VCB = 15 V and IC = 10 A, TA = +25؇C, unless otherwise noted.)
Parameter
Symbol
Conditions
MAT01N
Typical
Units
Average Offset Voltage Drift
Average Offset Current Drift
Collector-Emitter-Leakage
Current
Collector-Base-Leakage
Current
Gain Bandwidth Product
Offset Voltage Stability
TCVOS
TCIOS
ICES
ICBO
fT
∆VOS/T
VCE = 30 V, VBE = 0
VCB = 30 V, IE = 0
VCE = 10 V, IC = 10 mA
First Month (Note 1)
Long-Term (Note 2)
NOTES
1Exclude first hour of operation to allow for stabilization.
2Parameter describes long-term average drift after first month of operation.
3Sample tested.
4The collector-base (ICBO) and collector-emitter (ICES) leakage currents may be
reduced by a factor of two to ten times by connecting the substrate (package) to
a potential which is lower than either collector voltage.
5ICC and ICES are guaranteed by measurement of ICBO.
6Guaranteed
7Guaranteed
by
by
VOS test (TCVOS ≅
IOS test limits over
VOS
T
for VOS
temperature.
Ӷ
VBE)
T
=
298°K
for
TA
=
25°C.
Specifications subject to change without notice.
0.35
15
90
25
450
2.0
0.2
µV/°C
pA/°C
pA
pA
MHz
µV/Mo
µV/Mo
WAFER TEST LIMITS (@ VCB = 15 V, IC = 10 A, TA = +25؇C, unless otherwise noted.)
Parameter
Symbol
Conditions
MAT01N
Limits
Units
Breakdown Voltage
Offset Voltage
Offset Current
Bias Current
Current Gain
Current Gain Match
Offset Voltage Change
Offset Current Change
Collector Saturation Voltage
BVCEO
VOS
IOS
IB
hFE
∆hFE
∆VOS/∆VCB
∆VOS/∆VCB
VCE (SAT)
IC = 100 µA
45
0.5
3.2
40
250
8.0
0 ≤ VCB ≤ 30 V
8.0
0 ≤ VCB ≤ 30 V
70
IB = 0.1 mA, IC = 1 mA
0.25
V min
mV max
nA max
nA max
min
% max
µV/V max
pA/V max
V max
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not
guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
REV. A
–3–
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