MAT01N 查看數據表（PDF） - Analog Devices

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MAT01N

Matched Monolithic Dual Transistor

Analog Devices 

APPLICATION NOTES

Application of reverse bias voltages to the emitter-base junctions

in excess of ratings (5 V) may result in degradation of hFE and

hFE matching characteristics. Circuit designs should be checked

to ensure that reverse bias voltages above 5 V cannot be applied

during such transient conditions as at circuit turn-on and

turn-off.

Stray thermoelectric voltages generated by dissimilar metals at

the contacts to the input terminals can prevent realization of the

predicted drift performance. Both input terminals should be

maintained at the same temperature, preferably close to the tem-

perature of the device’s package.

TYPICAL APPLICATIONS

MAT01

Figure 12. Precision Reference

Figure 14. Precision Operational Amplifiers

Figure 13. Basic Digital Thermometer Readout in

Degrees Kelvin (°K)

Figure 15. Digital Thermometer with Readout in °C

REV. A

–7–

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