MAX17000 查看數據表（PDF） - Maxim Integrated

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MAX17000

Complete DDR2 and DDR3 Memory Power-Management Solution

Maxim Integrated 

MAX17000

Complete DDR2 and DDR3 Memory

Power-Management Solution

ELECTRICAL CHARACTERISTICS (continued)

(VIN = 12V, VCC = VDD = VSHDN = VREFIN = 5V, VCSL = 1.8V, STDBY = SKIP = AGND, TA = 0°C to +85°C, unless otherwise noted.

Typical values are at TA = +25°C.) (Note 1)

PARAMETER

SYMBOL

CONDITIONS

MIN TYP MAX UNITS

CURRENT LIMIT

Valley Current-Limit Threshold

VLIMIT VCSH - VCSL

17

20

25

mV

Current-Limit Threshold

(Negative)

VNEG VCSH - VCSL, SKIP = VCC

-23

mV

Current-Limit Threshold

(Zero Crossing)

VZX

VPGND1 - VLX

1

mV

SMPS GATE DRIVERS

DH Gate Driver On-Resistance

DL Gate Driver On-Resistance

RDH BST - LX forced to 5V

DL high

RDL

DL low

1.5

5.0

1.5

5.0

0.6

3.0

DH Gate Driver Source/

Sink Current

IDH

DH forced to 2.5V, BST - LX forced to 5V

1

A

DL Gate Driver Source/

Sink Current

Dead Time

Internal BST Switch

On-Resistance

LX, BST Leakage Current

INPUTS AND OUTPUTS

Logic Input Threshold

Logic Input Current

Input Leakage Current

Input Bias Current

IDL(SRC)

IDL(SNK)

tDEAD

RBST

DL forced to 2.5V

DL forced to 2.5V

DL rising, TA = +25°C

DL falling, TA = +25°C

IBST = 10mA,

VDD = 5V internal design target

VBST = VLX = 26V, SHDN = AGND,

TA = +25°C

SHDN, STDBY, SKIP, OVP, rising edge

hysteresis = 300mV/600mV (min/max)

SKIP = AGND or VCC,

VCSH = 0V or VCC, TA = +25°C

VCSL = 0V or VCC

1

A

3

10

25

ns

15

35

4.5

0.001 20

μA

1.30 1.65 2.00

V

-1

+1

μA

-1

+1

μA

55

100

μA

Maxim Integrated

5

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