DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MBR10100CTP 查看數據表(PDF) - Diodes Incorporated.

零件编号
产品描述 (功能)
生产厂家
MBR10100CTP
Diodes
Diodes Incorporated. Diodes
MBR10100CTP Datasheet PDF : 4 Pages
1 2 3 4
MBR10100CTP
Maximum Ratings (Per Leg) @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
100
V
DC Blocking Voltage
VRM
Average Rectified Output Current
(Per Leg)
(Total)
IO
5
10
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
100
A
Isolation Voltage
From Terminal Heatsink t = 1 min.
VAC
2000
V
Thermal Characteristics (Per Leg)
Characteristic
Typical Thermal Resistance Junction to Case
Operating and Storage Temperature Range
Symbol
RθJC
TJ, TSTG
Value
3
-65 to +175
Unit
°C/W
ºC
Electrical Characteristics (Per Leg) @TA = 25°C unless otherwise specified
Characteristic
Forward Voltage Drop
Leakage Current (Note 3)
Symbol Min
Typ
Max
-
0.79
0.85
VF
-
0.65
0.75
-
IR
-
-
0.1
-
15
Notes: 3. Short duration pulse test used to minimize self-heating effect.
Unit
V
mA
Test Condition
IF = 5A, TJ = 25ºC
IF = 5A, TJ = 125ºC
VR = 100V, TJ = 25ºC
VR = 100V, TJ = 125ºC
100
10
TA = 150°C
1
TA = 125°C
TA = 85°C
0.1
TA = 25°C
TA = -55°C
0.01
0 200 400 600 800 1,000 1,200 1,400
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 1 Typical Forward Characteristics
10,000
1,000
100
10
TA = 150°C
TA = 125°C
TA = 85°C
1
TA = 25°C
0.1
0.01
0
20
40
60
80
100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
MBR10100
Document number: DS31412 Rev. 11 - 2
2 of 4
www.diodes.com
April 2011
© Diodes Incorporated

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]