MBR20100CT 查看數據表（PDF） - Vishay Semiconductors
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MBR20100CT Datasheet PDF : 4 Pages
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www.vishay.com
MBR2090CT-M3, MBR20100CT-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Max. instantaneous forward voltage per diode
Max. reverse current per diode
at working peak reverse voltage
IF = 10 A
IF = 20 A
TC = 25 °C
TC = 125 °C
TJ = 25 °C
TJ = 100 °C
VF (1)
IR (2)
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
VALUE
0.80
0.65
0.75
100
6.0
UNIT
V
μA
mA
THERMAL CHARACTERISTICS
PARAMETER
Typical thermal resistance per diode
SYMBOL
RJA
RJC
MBR2090CT, MBR20100CT
60
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
MBR20100CT-M3/4W
1.88
PACKAGE CODE BASE QUANTITY DELIVERY MODE
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
20
Resistive or Inductive Load
16
12
8
4
0
0
50
100
150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
160
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
140
120
100
80
60
40
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Max. Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 11-May-16
2
Document Number: 89192
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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