MBR350 查看數據表（PDF） - Vishay Semiconductors
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MBR350 Datasheet PDF : 5 Pages
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MBR350, MBR360
Vishay High Power Products
Schottky Rectifier, 3 A
Cathode
Anode
C-16
PRODUCT SUMMARY
IF(AV)
VR
VF at 3 A at 25 °C
IRM
3A
50/60 V
0.73 V
15 mA at 125 °C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
Rectangular waveform
IFSM
tp = 5 µs sine
VF
3 Apk, TJ = 25 °C
TJ
FEATURES
• Low profile, axial leaded outline
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
DESCRIPTION
The MBR350, MBR360 axial leaded Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
VALUES
3.0
50/60
460
0.73
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
MBR350
50
MBR360
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
See fig. 6
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TL = 50 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1 A, L = 10 mH
Current decaying linearly to zero in 1 µs
Frequency limited by, TJ maximum VA = 1.5 x VR typical
VALUES
3.0
460
80
5.0
1.0
UNITS
A
mJ
A
Document Number: 93450
Revision: 06-Nov-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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