MBR350 查看數據表（PDF） - Vishay Semiconductors
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MBR350 Datasheet PDF : 5 Pages
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MBR350, MBR360
Schottky Rectifier, 3 A Vishay High Power Products
1000
100
TJ = 25˚C
100
10
1
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
0.1
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Forward Voltage Drop - V FM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
0
40
80 120 160
Reverse Voltage - V R (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
160
140
120
DC
100
80
60
40
Square wave (D = 0.50)
80% Rated Vr applied
20 see note (1)
0
0
1
2
3
4
5
Average Forward Current - I F(AV) (A)
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
100
10
TJ = 150˚C
1
125˚C
0.1
0.01
25˚C
3
2.5
2
RMS Limit
1.5
1
0.5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DDCC
0.001
0
20
40
60
Reverse Voltage - V R (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Average Forward Current - I F(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Document Number: 93450
Revision: 06-Nov-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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