MBRS340T3 查看數據表（PDF） - ON Semiconductor

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MBRS340T3

Surface Mount Schottky Power Rectifier

ON Semiconductor 

MBRS320T3, MBRS330T3, MBRS340T3

MAXIMUM RATINGS

Rating

Symbol MBRS320T3 MBRS330T3 MBRS340T3 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave,

single phase, 60 Hz)

VRRM

20

30

40

V

VRWM

VR

IF(AV)

3.0 @ TL = 110°C

A

4.0 @ TL = 105°C

IFSM

80

A

Operating Junction Temperature

ISO 7637 Pulse #1

(100 V, 10W)

TJ

− 65 to +150

°C

5000

Pulses

ESD Ratings: Machine Model = C

ESD Ratings: Human Body Model = 3B

>400

V

>8000

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Lead

RqJL

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 1)

VF

(iF = 3.0 A, TJ = 25°C)

Maximum Instantaneous Reverse Current (Note 1)

iR

(Rated dc Voltage, TJ = 25°C)

(Rated dc Voltage, TJ = 100°C)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

11

°C/W

V

0.50

mA

2.0

20

TYPICAL ELECTRICAL CHARACTERISTICS

10

10

1 TJ = 125°C

TJ = 100°C

TJ = 25°C

0.1

TJ = −65°C

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Figure 1. Typical Forward Voltage

1

TJ = 125°C

TJ = 100°C

TJ = 25°C

0.1

TJ = −65°C

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)

Figure 2. Maximum Forward Voltage

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