MBRS360TR 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

生产厂家

MBRS360TR

Schottky Rectifier, 3.0 A

Vishay Semiconductors 

MBRS360TRPbF

Vishay High Power Products Schottky Rectifier, 3.0 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

VFM (1)

Maximum reverse leakage current

IRM (1)

Maximum junction capacitance

Typical series inductance

Maximum voltage rate of change

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

CT

LS

dV/dt

TEST CONDITIONS

3A

TJ = 25 °C

6A

3A

TJ = 125 °C

6A

TJ = 25 °C

TJ = 100 °C

VR = Rated VR

TJ = 125 °C

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

Measured lead to lead 5 mm from package body

Rated VR

TYP.

0.57

0.72

0.51

0.62

-

-

-

-

-

-

MAX. UNITS

0.74

0.9

V

0.61

0.77

0.5

20

mA

30

180

pF

3.0

nH

10 000 V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction and storage

temperature range

TJ (1), TStg

Maximum thermal resistance,

junction to lead

Maximum thermal resistance,

junction to ambient

RthJL (2)

RthJA

DC operation

Approximate weight

Marking device

Case style SMC (similar to DO-214AB)

Notes

(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink

dTJ RthJA

(2) Mounted 1" square PCB

VALUES

- 55 to 150

UNITS

°C

12

°C/W

46

0.24

g

0.008

oz.

V36

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 94322

Revision: 15-Aug-08

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