MC-4564EC727EF-A75 查看數據表（PDF） - NEC => Renesas Technology

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MC-4564EC727EF-A75

64M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE

NEC => Renesas Technology 

MC-4564EC727

Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up, wait more than 1 ms and then, execute power on sequence and CBR (Auto) refresh before proper

device operation is achieved.

Absolute Maximum Ratings

Parameter

Voltage on power supply pin relative to GND

Voltage on input pin relative to GND

Short circuit output current

Power dissipation

Operating ambient temperature

Storage temperature

Symbol

VCC

VT

IO

PD

TA

Tstg

Condition

Rating

Unit

–0.5 to +4.6

V

–0.5 to +4.6

V

50

mA

40

W

0 to +70

°C

–55 to +125

°C

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Recommended Operating Conditions

Parameter

Supply voltage

High level input voltage

Low level input voltage

Operating ambient temperature

Symbol

VCC

VIH

VIL

TA

Condition

MIN.

3.0

2.0

–0.3

0

TYP. MAX. Unit

3.3

3.6

V

VCC + 0.3 V

+ 0.8

V

70

°C

Capacitance (TA = 25 °C, f = 1 MHz)

Parameter

Input capacitance

Data input/output capacitance

Symbol

Test condition

MIN. TYP. MAX. Unit

CI1 A0 - A11, BA0 (A13), BA1 (A12),

TBD

/RAS, /CAS, /WE

pF

TBD

CI2

CLK0

TBD

TBD

CI3

CKE0

TBD

TBD

CI4

/CS0 - /CS3

TBD

TBD

CI5

DQMB0 - DQMB7

TBD

TBD

CI/O DQ0 - DQ63, CB0 - CB7

TBD

TBD

pF

6

Data Sheet M14461EJ2V0DS00

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