MC-45D16CB641KF-C80 查看數據表（PDF） - Elpida Memory, Inc

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MC-45D16CB641KF-C80

16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

Elpida Memory, Inc 

AC Characteristics (Recommended Operating Conditions unless otherwise noted)

Test Conditions

Parameter

Symbol

Value

Unit Notes

Input Reference voltage (Input timing measurement reference level) VREF

VDDQ x 0.5

V

Termination voltage (Output timing measurement reference level)

VTT

VREF

V

1

High level ac input voltage

Low level ac input voltage

Input differential voltage (CK0 - CK2 and /CK0 - /CK2)

VIH(ac)

VREF + 0.31

V

VIL(ac)

VREF − 0.31

V

VID(ac)

0.7

V

Input signal slew rate

SLEW

1

V/ns 2

Notes 1. Output waveform timing is measured where the output signal crosses through the VTT level.

2. Slew rate is to be maintained in the VIL (ac) to VIH(ac) range of the input signal swing. SLEW = (VIH(ac)-

VIL(ac))/ ∆t

Output

VTT

RT = 50 Ω

CLOAD = 30 pF

Preliminary Data Sheet E0034N10

7

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