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MC100EP58(2001) 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
生产厂家
MC100EP58
(Rev.:2001)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC100EP58 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MC10EP58, MC100EP58
100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 9.)
–40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
VOH
Power Supply Current
Output HIGH Voltage (Note 10.)
20
28
37
20
31
39
25
33
42 mA
2155 2280 2405 2155 2280 2405 2155 2280 2405 mV
VOL
VIH
Output LOW Voltage (Note 10.)
Input HIGH Voltage (Single Ended)
1355 1480 1605 1355 1480 1605 1355 1480 1605 mV
2075
2420 2075
2420 2075
2420 mV
VIL
Input LOW Voltage (Single Ended)
1355
1675 1355
1675 1355
1675 mV
IIH
Input HIGH Current
150
150
150 µA
IIL
Input LOW Current
0.5
0.5
0.5
µA
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
9. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to –2.2 V.
10. All loading with 50 ohms to VCC–2.0 volts.
100EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 11.)
–40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
Power Supply Current
20
28
37
20
31
39
25
33
42 mA
VOH
VOL
VIH
Output HIGH Voltage (Note 12.)
Output LOW Voltage (Note 12.)
Input HIGH Voltage (Single Ended)
3855 3980 4105 3855 3980 4105 3855 3980 4105 mV
3055 3180 3305 3055 3180 3305 3055 3180 3305 mV
3775
4120 3775
4120 3775
4120 mV
VIL
Input LOW Voltage (Single Ended)
3055
3375 3055
3375 3055
3375 mV
IIH
Input HIGH Current
150
150
150 µA
IIL
Input LOW Current
0.5
0.5
0.5
µA
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
11. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to –0.5 V.
12. All loading with 50 ohms to VCC–2.0 volts.
100EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = –5.5 V to –3.0 V (Note 13.)
–40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
Power Supply Current
20
28
37
20
31
39
25
33
42 mA
VOH
Output HIGH Voltage (Note 14.)
–1145 –1020 –895 –1145 –1020 –895 –1145 –1020 –895 mV
VOL
Output LOW Voltage (Note 14.)
–1945 –1820 –1695 –1945 –1820 –1695 –1945 –1820 –1695 mV
VIH
Input HIGH Voltage (Single Ended) –1225
–880 –1225
–880 –1225
–880 mV
VIL
Input LOW Voltage (Single Ended) –1945
–1625 –1945
–1625 –1945
–1625 mV
IIH
Input HIGH Current
150
150
150 µA
IIL
Input LOW Current
0.5
0.5
0.5
µA
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
13. Input and output parameters vary 1:1 with VCC.
14. All loading with 50 ohms to VCC–2.0 volts.
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