98ASB42564B 查看數據表（PDF） - Freescale Semiconductor

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98ASB42564B

Electric Field Imaging Device

Freescale Semiconductor 

Table 2. Static Electrical Characteristics

Characteristics noted under conditions 5.5 V ≤ VSUP ≤ 18 V, 0°C ≤ TA ≤ 110°C, GND = 0 V unless otherwise noted. Typical

values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

SUPPLY (VPWR)

Supply Voltage

VPWR

9.0

IDD (VPWR = 14V)

IDD

(Quiescent supply current measured over temperature. Assumes

6.0

that no external devices connected to internal voltage regulators)

12

18

V

mA

7.0

8.0

VOLTAGE REGULATOR

5V Regulator Voltage

VCCCAP

7.0 V ≤ VPWR ≤ 18 V, 1.0 mA ≤ IL ≤ 75 mA, CFILT = 47 µF

4.75

ELECTRODE SIGNALS (E1–E7)

Total Variance Between Electrode Measurements (5)

All CLOAD = 15 pF

ELVVAR

–

Electrode Maximum Harmonic Level Below Fundamental (5)

ELHARM

5.0 pF ≤ CLOAD ≤ 150 pF

–

Electrode Transmit Output Range

5.0 pF ≤ CLOAD ≤ 150 pF

ELTXV

1.0

Receive Input Voltage Range

Grounding Switch on Voltage(6)

ISW = 1.0 mA

RXV

0

SWVON

–

LOGIC I/O (C, B, A)

CMOS Logic Input Low Threshold

Logic Input High Threshold

Voltage Hysteresis

Input Current

VIN = VCC

VIN = 0 V

VTHL

0.3

VTHH

–

VHYS

–

IIN

10

-5.0

SIGNAL DETECTOR (LPCAP)

Detector Output Resistance

DETRO

–

LPCAP to LEVEL Gain

AREC

3.6

LPCAP to LEVEL Offset

VRECOFF

-3.3

Notes

5. Verified by design and characterization. Not tested in production.

6. Current into grounded terminal under test = 1.0 mA.

V

5

5.25

%

–

3.0

dB

-20

–

V

–

8.0

–

9.0

V

V

–

5.0

–

–

0.06

–

–

–

VCC

0.7

VCC

–

VCC

µA

50

5.0

50

–

kΩ

4.0

4.4

AV

-3.0

-2.7

V

MC33941

4

Sensors

Freescale Semiconductor

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