MC34704 查看數據表（PDF） - Freescale Semiconductor

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MC34704

Multiple Channel DC-DC Power Management IC

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Table 4. Static Electrical Characteristics (continued)

Characteristics noted under conditions 2.7 V ≤ VIN ≤ 5.5 V, -20°C ≤ TA ≤ 85°C, GND = 0 V, unless otherwise noted. Typical

values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

REGULATOR 4

Output Voltage Range

Output Accuracy

Line/Load Regulation(13)

Feedback Reference Voltage

Dynamic Voltage Scaling Range

Dynamic Voltage Scaling Step Size

Continuous Output Current(13)

Over-current Limit (Detected in buck high side FET)

Short-circuit Current Limit (Detected in buck high side FET)

Over-current Limit Accuracy

VOUT

-

0.6

1.8

3.6

V

-2.0

-

2.0

%

REGLN/LD

-1.0

-

1.0

%

VFB

-

0.600(14)

-

V

VDYN

-10

-

10

%

VDYN_STEP

-

1.0

-

%

IOUT

-

100

300

mA

ILIM_ION

-

1.5

-

A

ISHORT_ION

-

2.25

-

A

-

-20

-

20

%

N-CH Buck Switch Power MOSFET RDS(ON)

N-CH Buck Synch. Power MOSFET RDS(ON)

N-CH Boost Switch Power MOSFET RDS(ON)

N-CH Boost Synch. Power MOSFET RDS(ON)

Discharge MOSFET RDS(ON)

Thermal Shutdown Threshold(13)

Thermal Shutdown Hysteresis(13)

PVIN4 Leakage Current (Off State) @25°C

SW4D Leakage Current (Off State) @25°C

SW4U Leakage Current (Off State) @25°C

REGULATOR 5

RDS(ON)-SW

-

RDS(ON)-SY

-

RDS(ON)-SW

-

RDS(ON)-SY

-

RDS(ON)-DIS

-

TSD

-

TSD-HYS

-

IPVIN4_LKG

-

ISW4D_LKG

-

ISW4U_LKG

-

200

-

mΩ

600

-

mΩ

200

-

mΩ

600

-

mΩ

70

-

Ω

170

-

°C

25

-

°C

-

1.0

μA

-

1.0

μA

-

1.0

μA

Output Voltage Range

Output Accuracy

Line/Load Regulation(13)

Feedback Reference Voltage

Dynamic Voltage Scaling Range

Dynamic Voltage Scaling Step Size

Continuous Output Current(13)

Over-current Limit (Detected in buck high side FET)

Short-circuit Current Limit (Detected in buck high side FET)

Over-current Limit Accuracy

VOUT

-

0.6

3.3

3.6

V

-2.0

-

2.0

%

REGLN/LD

-1.0

-

1.0

%

VFB

-

0.600(14)

-

V

VDYN

-17.5

-

17.5

%

VDYN_STEP

-

2.5

-

%

IOUT

-

150

500

mA

ILIM_ION

-

1.4

-

A

ISHORT_ION

-

2.1

-

A

-

-20

-

20

%

N-CH Buck Switch Power MOSFET RDS(ON)

RDS(ON)-SW

-

120

-

mΩ

N-CH Buck Synch. Power MOSFET RDS(ON)

RDS(ON)-SY

-

1000

-

mΩ

N-CH Boost Switch Power MOSFET RDS(ON)

RDS(ON)-SW

-

120

-

mΩ

N-CH Boost Synch. Power MOSFET RDS(ON)

RDS(ON)-SY

-

120

-

mΩ

Discharge MOSFET RDS(ON)

Thermal Shutdown Threshold(13)

Thermal Shutdown Hysteresis(13)

RDS(ON)-DIS

-

70

-

Ω

TSD

-

170

-

°C

TSD-HYS

-

25

-

°C

Notes:

13. Guaranteed by Design

14. VFB is 0.6V when the part ist powered up and no DVS is changed. DVS is achieved by modifying VFB reference.

Analog Integrated Circuit Device Data

Freescale Semiconductor

34704

11

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