EMIF06-10006F1 查看數據表（PDF） - STMicroelectronics
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EMIF06-10006F1 Datasheet PDF : 6 Pages
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EMIF06-10006F1
ABSOLUTE RATINGS (limiting values)
Symbol
PR
PT
Tj
Top
Tstg
Parameter and test conditions
DC power per resistance
Total DC power per package
Maximum junction temperature
Operating temperature range
Storage temperature range
Value
Unit
0.1
W
0.6
W
125
°C
-40 to + 85
°C
125
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C)
Symbol
Parameter
VBR
Breakdown voltage
IRM
Leakage current @ VRM
VRM Stand-off voltage
VCL
Clamping voltage
Rd
Dynamic impedance
IPP
Peak pulse current
RI/O
Series resistance between Input
and Output
Cline
Input capacitance per line
I
IF
VF
VCL VBR VRM
V
IRM
IR
IPP
Symbol
VBR
IRM
RI/O
Cline
Test conditions
IR = 1 mA
VRM = 3.3 V per line
I = 10 mA
VR = 2.5 V, F = 1 MHz, 30 mV (on filter cells)
Min. Typ. Max. Unit
5.5
7
9
V
500
nA
80
100
120
Ω
50
60
70
pF
2/6
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