MC74LVX4245DTR2G 查看數據表（PDF） - ON Semiconductor
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MC74LVX4245DTR2G Datasheet PDF : 10 Pages
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MC74LVX4245
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IIN
Max Input Leak-
age
OE,
T/R
Current
Condition
VI = VCCA, GND
VCCA VCCB
TA = 25°C
Typ
TA = −40 to +85°C
Guaranteed Limits
5.5 3.6
±0.1
±1.0
Unit
mA
IOZA
Max 3−State Out-
put Leakage
VI = VIH, VIL
An
OE = VCCA
VO = VCCA, GND
5.5 3.6
mA
±0.5
±5.0
IOZB
Max 3−State Out-
put Leakage
VI = VIH, VIL
Bn
OE = VCCA
VO = VCCB, GND
5.5 3.6
mA
±0.5
±5.0
DICC
Maximum ICCT
per Input
An,OE
T/R
VI=VCCA−2.1V
5.5 3.6
1.0
1.35
1.5
mA
Bn
VI=VCCB−0.6V
5.5 3.6
0.35
0.5
mA
ICCA
Quiescent VCCA
Supply Current
An=VCCA or GND
Bn=VCCB or GND
OE=GND
5.5
3.6
T/R=GND
mA
8
80
ICCB
Quiescent VCCB
Supply Current
An=VCCA or GND
Bn=VCCB or GND
OE=GND
5.5
3.6
T/R=VCCA
mA
5
50
VOLPA Quiet Output Max
VOLPB Dynamic VOL
Notes 1, 2
5.0 3.3
5.0 3.3
1.5
1.2
V
VOLVA Quiet Output Min
VOLVB Dynamic VOL
Notes 1, 2
5.0 3.3
5.0 3.3
−1.2
−0.8
V
VIHDA
VIHDB
Min HIGH Level
Dynamic Input
Voltage
Notes 1, 3
5.0 3.3
5.0 3.3
2.0
2.0
V
VILDA
VILDB
Max LOW Level
Dynamic Input
Voltage
Notes 1, 3
5.0 3.3
5.0 3.3
0.8
0.8
V
1. Worst case package.
2. Max number of outputs defined as (n). Data inputs are driven 0V to VCC level; one output at GND.
3. Max number of data inputs (n) switching. (n−1) inputs switching 0V to VCC level. Input under test switching: VCC level to threshold (VIHD),
0V to threshold (VILD), f = 1MHz.
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
CIN Input Capacitance
CI/O Input/Output Capacitance
CPD Power Dissipation Capacitance
(Measured at 10MHz)
B→A
A→B
Condition
VCCA = 5.0V; VCCB = 3.3V
VCCA = 5.0V; VCCB = 3.3V
VCCA = 5.0V
VCCB = 3.3V
Typical
Unit
4.5
pF
15
pF
55
pF
40
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