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MC74VHC541(2014) 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
生产厂家
MC74VHC541
(Rev.:2014)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC74VHC541 Datasheet PDF : 6 Pages
1 2 3 4 5 6
MC74VHC541
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC DC Supply Voltage
– 0.5 to + 7.0
V
Vin
DC Input Voltage
– 0.5 to + 7.0
V
Vout DC Output Voltage
– 0.5 to VCC + 0.5 V
IIK
Input Diode Current
− 20
mA
IOK Output Diode Current
± 20
mA
Iout DC Output Current, per Pin
± 25
mA
ICC DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air,
SOIC Package†
500
mW
TSSOP Package†
450
Tstg Storage Temperature
– 65 to + 150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max Unit
VCC DC Supply Voltage
Vin
DC Input Voltage
2.0
5.5
V
0
5.5
V
Vout DC Output Voltage
0
VCC
V
TA
Operating Temperature, All Package Types
−55
+125
_C
tr, tf Input Rise and Fall Time
VCC = 3.3V ±0.3V
VCC = 5.0V ±0.5V
0
100 ns/V
0
20
Functional operation above the stresses listed in the Recommended Operating Ranges is not
implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may
affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
VIH Minimum High−Level Input
Voltage
VIL Maximum Low−Level Input
Voltage
VOH Minimum High−Level Output
Voltage
Test Conditions
Vin = VIH or VIL
IOH = − 50mA
VCC
TA = 25°C
TA = − 55 to 125°C
V
Min
Typ
Max
Min
Max Unit
2.0
1.50
3.0 to 5.5 VCC x 0.7
1.50
V
VCC x 0.7
2.0
3.0 to 5.5
0.50
VCC x 0.3
0.50
V
VCC x 0.3
2.0
1.9
2.0
1.9
V
3.0
2.9
3.0
2.9
4.5
4.4
4.5
4.4
Vin = VIH or VIL
IOH = − 4mA
3.0
IOH = − 8mA
4.5
VOL Maximum Low−Level Output Vin = VIH or VIL
2.0
Voltage
IOL = 50mA
3.0
4.5
2.58
3.94
0.0
0.1
0.0
0.1
0.0
0.1
2.48
3.80
0.1
V
0.1
0.1
Iin
Maximum Input Leakage
Current
Vin = VIH or VIL
IOL = 4mA
IOL = 8mA
Vin = 5.5V or GND
3.0
4.5
0 to 5.5
0.36
0.36
± 0.1
0.44
0.44
± 1.0 mA
IOZ
Maximum 3−State Leakage
Vin = VIL or VIH
5.5
Current
Vout = VCC or GND
± 0.25
± 2.5 mA
ICC Maximum Quiescent Supply Vin = VCC or GND
5.5
Current
4.0
40.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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