MC74VHCT138AD 查看數據表（PDF） - ON Semiconductor
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MC74VHCT138AD Datasheet PDF : 8 Pages
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MC74VHCT138A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ IIK
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ IOK
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ PD
DC Supply Voltage
– 0.5 to + 7.0
V
DC Input Voltage
– 0.5 to + 7.0
V
DC Output Voltage
Input Diode Current
VCC = 0 – 0.5 to + 7.0
V
High or Low State – 0.5 to VCC + 0.5
– 20
mA
Output Diode Current (VOUT < GND; VOUT > VCC)
± 20
mA
DC Output Current, per Pin
± 25
mA
DC Supply Current, VCC and GND Pins
± 75
mA
Power Dissipation in Still Air,
SOIC Packages†
500
mW
TSSOP Package†
450
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Tstg StorageTemperature
– 65 to + 150
_C
* Absolute maximum continuous ratings are those values beyond which damage to the device
may occur. Exposure to these conditions or conditions beyond those indicated may
adversely affect device reliability. Functional operation under absolute–maximum–rated
conditions is not implied.
†Derating — SOIC Packages: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
v v Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC DCSupplyVoltage
3.0 5.5 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vout
DC Input Voltage
DC Output Voltage
0
VCC = 0 0
High or Low State 0
5.5 V
5.5 V
VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TA
Operating Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tr,tf InputRiseandFallTime
– 55 + 125 _C
VCC =5.0V ±0.5V 0
20 ns/V
The qJA of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the table and
figure below.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1
10
100
1000
TIME, YEARS
Figure 1. Failure Rate vs. Time
Junction Temperature
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