MC79L05ACPRP 查看數據表（PDF） - ON Semiconductor
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MC79L05ACPRP Datasheet PDF : 11 Pages
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MC79L00A Series
MAXIMUM RATINGS (TA = +25°C, unless otherwise noted.)
Rating
Input Voltage
(−5 V)
(−12, −15, −18 V)
(−24 V)
Symbol
Value
Unit
VI
−30
Vdc
−35
−40
Power Dissipation
Case 29 (TO−92 Type)
TA = 25°C
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
PD
RqJA
RqJC
Internally Limited
160
83
W
°C/W
°C/W
Case 751 (SOIC−8 Type) (Note 1)
TA = 25°C
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
PD
RqJA
RqJC
Internally Limited
180
45
W
°C/W
°C/W
Storage Temperature Range
Tstg
−65 to +150
°C
Junction Temperature
TJ
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. SOIC−8 Junction−to−Ambient Thermal Resistance is for minimum recommended pad size. Refer to Figure 9 for Thermal Resistance variation
versus pad size.
*This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD_883, Method 3015
Machine Model Method 200 V.
ELECTRICAL CHARACTERISTICS (VI = −10 V, IO = 40 mA, CI = 0.33 mF, CO = 0.1 mF, −40°C < TJ +125°C (for MC79LXXAB),
0°C < TJ < +125°C (for MC79LXXAC)).
MC79L05AC, AB
Characteristics
Symbol
Min
Typ
Max
Unit
Output Voltage (TJ = +25°C)
Input Regulation (TJ = +25°C)
−7.0 Vdc ≥ VI ≥ −20 Vdc
−8.0 Vdc ≥ VI ≥ −20 Vdc
VO
Regline
−4.8
−
−
−5.0
−
−
−5.2
Vdc
mV
150
100
Load Regulation
TJ = +25°C, 1.0 mA ≤ IO ≤ 100 mA
1.0 mA ≤ IO ≤ 40 mA
Regload
−
−
mV
−
60
−
30
Output Voltage
−7.0 Vdc ≥ VI ≥ −20 Vdc, 1.0 mA ≤ IO ≤ 40 mA
VI = −10 Vdc, 1.0 mA ≤ IO ≤ 70 mA
VO
Vdc
−4.75
−
−5.25
−4.75
−
−5.25
Input Bias Current
(TJ = +25°C)
(TJ = +125°C)
IIB
−
−
mA
−
6.0
−
5.5
Input Bias Current Change
−8.0 Vdc ≥ VI ≥ −20 Vdc
1.0 mA ≤ IO ≤ 40 mA
IIB
−
−
mA
−
1.5
−
0.1
Output Noise Voltage (TA = +25°C, 10 Hz ≤ f ≤ 100 kHz)
Ripple Rejection (−8.0 ≥ VI ≥ −18 Vdc, f = 120 Hz, TJ = +25°C)
Dropout Voltage (IO = 40 mA, TJ = +25°C)
Vn
−
40
RR
41
49
|VI−VO|
−
1.7
−
mV
−
dB
−
Vdc
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