MCF51EM128 查看數據表（PDF） - Freescale Semiconductor

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MCF51EM128

ColdFire Microcontroller

Freescale Semiconductor 

Electrical Characteristics

Table 9. ESD and Latch-Up Protection Characteristics

Num

Rating

1 Human Body Model (HBM)

2 Machine Model (MM)

3 Charge Device Model (CDM)

4 Latch-up Current at TA = 85 °C

Symbol

VHBM

VMM

VCDM

ILAT

Min

±2000

±200

±500

±100

Max

Unit

—

V

—

V

—

V

—

mA

2.5 DC Characteristics

This section includes information about power supply requirements, I/O pin characteristics, and power

supply current in various operating modes.

Table 10. DC Characteristics

Num C

Parameter

Symbol

Min

Typical1

Max

Unit

1

P

Operating

voltage

Digital supply — 50 MHz operation

Digital supply2 — 20 MHz maximum

operation

VDD

VDD

2.5

1.8

—

—

2 P Analog supply

VDDA

1.8

—

3 D Battery supply

4 P Bandgap voltage reference3

VBAT

VBG

2.2

1.15

3

1.17

PTA[7:0], PTB[7:0], PTC[2:0], PTE[6:0],

C

low-drive strength.

VDD ≥ 1.8 V, ILoad = –0.6 mA

5

P

Output high

voltage

PTA[7:0], PTB[7:0], PTC[2:0], PTE[6:0],

high-drive strength.

VDD ≥ 2.7 V, ILoad = –10 mA

VOH

VDD – 0.5

—

PTA[7:0], PTB[7:0], PTC[2:0], PTE[6:0],

C

high-drive strength.

VDD ≥ 1.8 V, ILoad = –3 mA

PTC[7:3], PTD[7:0], PTE7, PTF[7:0],

C

LCD35/CLKOUT, MOSI2, MISO2,

SCK2, SS2, low drive strength.

VDD ≥ 1.8 V, ILoad = –0.5 mA

PTC[7:3], PTD[7:0], PTE7, PTF[7:0],

6

P

Output high

voltage

LCD35/CLKOUT, MOSI2, MISO2,

SCK2, SS2, high-drive strength.

VDD ≥ 2.7 V, ILoad = –3 mA

VOH

VDD – 0.5

—

PTC[7:3], PTD[7:0], PTE7, PTF[7:0],

C

LCD35/CLKOUT, MOSI2, MISO2,

SCK2, SS2, high-drive strength.

VDD ≥ 1.8 V, ILoad = –1 mA

7

D

Output high

current

Max total IOH for all ports

IOHT

—

—

3.6

V

2.5

3.6

V

3.3

V

1.18

V

—

V

—

V

100

mA

MCF51EM256 Series ColdFire Microcontroller Data Sheet, Rev.2

20

Preliminary—Subject to Change Without Notice

Freescale Semiconductor

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