MCP1602 查看數據表（PDF） - Microchip Technology

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MCP1602

(MCP1650 - MCP1653) 750 kHz Boost Controller

Microchip Technology 

MCP1602

DC CHARACTERISTICS (CONTINUED)

Electrical Characteristics: Unless otherwise indicated, VIN = 3.6V, COUT = CIN = 4.7 µF, L = 4.7 µH,

VOUT(ADJ) = 1.8V, IOUT = 100 mA, TA = +25°C. Boldface specifications apply for the TA range of -40oC to +85oC.

Parameters

Sym Min Typ Max Units

Conditions

Output Voltage Tolerance Fixed VOUT -2.5 VR +2.5

Line Regulation

VLINE-

—

0.3

—

REG

Load Regulation

VLOAD-

—

0.4

—

REG

Internal Oscillator Frequency

FOSC

1.6

2.0

2.4

Start Up Time

TSS

— 0.5 —

RDSon P-Channel

RDSon-P

—

450

—

RDSon N-Channel

RDSon-N

—

450

—

LX Pin Leakage Current

ILX

-1.0 ±0.01 1.0

Positive Current Limit Threshold +ILX(MAX) —

700

—

Power-Good (PG)

%

%/V

%

MHz

ms

mΩ

mΩ

µA

mA

Note 3

VIN = VR + 1V to 5.5V,

IOUT = 100 mA

VIN = VR +1.5V,

ILOAD = 100 mA to 500 mA, Note 1

TR = 10% to 90%

IP = 100 mA

IN = 100 mA

SHDN = 0V, VIN = 5.5V, LX = 0V,

LX = 5.5V

Note 7

Voltage Range

VPG

1.0 — 5.5

1.2

5.5

V TA = 0°C to +70°C

TA = -40°C to +85°C

VIN ≤ 2.7V, ISINK = 100 µA

PG Threshold High

VTH_H

—

94

96

% of On Rising VOUT

VOUT

PG Threshold Low

VTH_L

89

92

—

% of On Falling VOUT

VOUT

PG Threshold Hysteresis

VTH_HYS —

2

— % of

VOUT

PG Threshold Tempco

ΔVTH/ΔT —

30

— ppm/°C

PG Delay

tRPD

— 165 —

µs VOUT = (VTH_H + 100 mV) to

(VTH_L - 100 mV)

PG Active Time-out Period

tRPU

140 262 560

ms VOUT = (VTH_L - 100 mV) to

(VTH_H + 100 mV), ISINK = 1.2mA

PG Output Voltage Low

PG_VOL —

— 0.2

V VOUT = VTH_L - 100 mV,

IPG = 1.2 mA, VIN > 2.7V

IPG = 100 µA, 1.0 < VIN < 2.7V

Note 1: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VOUT + 0.5V.

2: Reference Feedback Voltage Tolerance applies to adjustable output voltage setting.

3: VR is the output voltage setting.

4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load

regulation is tested over a load range of 0.1 mA to the maximum specified output current. Changes in

output voltage due to heating effects are covered by the thermal regulation specification.

5: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable

temperature and the thermal resistance from junction to air (i.e. TA, TJ, θJA). Exceeding the maximum

allowable power dissipation causes the device to initiate thermal shutdown.

6: The internal MOSFET switches have an integral diode from the LX pin to the VIN pin, and from the LX pin

to the GND pin. In cases where these diodes are forward-biased, the package power dissipation limits

must be adhered too. Thermal protection is not able to limit the junction temperature for these cases.

7: The current limit threshold is a cycle-by-cycle current limit.

© 2007 Microchip Technology Inc.

DS22061A-page 5

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