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MCP1612T-ADJI/MF(2005) 查看數據表(PDF) - Microchip Technology

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MCP1612T-ADJI/MF
(Rev.:2005)
Microchip
Microchip Technology Microchip
MCP1612T-ADJI/MF Datasheet PDF : 22 Pages
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MCP1612
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VIN – AGND .......................................................................6.0V
(SHDN, FB, VCC, Comp ........... (AGND – 0.3V) to (VIN + 0.3V)
LX to PGND.............................................. -0.3V to (VIN + 0.3V)
PGND to AGND................................................... -0.3V to +0.3V
Output Short Circuit Current ................................. Continuous
Storage temperature .....................................-65°C to +150°C
Ambient Temp. with Power Applied.................-40°C to +85°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM) ....................................... 4 kV
ESD protection on all pins (MM)......................................... 300V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VIN = VCC = VSHDN = 3.3V, VOUT = 1.8V, CIN = COUT = 10 µF, L = 3.3 µH,
ILOAD = 100 mA, TA = +25°C. Boldface specifications apply over the TA range of -40°C to +85°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Voltage
Input Operating Voltage
Input Shutdown Current
Input Quiescent Current
Oscillator Characteristics
VIN
I(VIN)
I(VIN)
2.7
5.5
0.01
1
5
7
V
µA Shutdown mode (SHDN = GND)
mA ILOAD = 0 mA
Internal Oscillator Frequency
Internal Power Swicthes
FOSC
1.2
1.4
1.6
MHz
RDSon P-Channel
RDSon N-Channel
LX Pin Leakage Current
RDSon-P
RDSon-N
ILX
-1
Positive Current Limit Threshold +ILX(MAX)
Negative Current Limit Threshold -ILX(MAX)
Feedback Characteristics
300
300
1
2.3
-1.4
mΩ IP = 250 mA
mΩ IN = 250 mA
µA SHDN = 0V, VIN = 5.5V, LX = 0V,
LX = 5.5V
A
A
Transconductance from FB to
gm
35
62
90
µA/V
COMP
Output Voltage
Output Voltage Range
VOUT
0.8
VIN
V
Reference Feedback Voltage
VFB
0.78
0.8
0.82
V
Feedback Input Bias Current
IVFB
1
nA
Line Regulation
VLINE-REG
0.15
0.5
%/V VIN = 2.7V to 5.5V, ILOAD = 100 mA
Load Regulation
VLOAD-REG
0.25
% VIN = 4.2V, ILOAD = 100 mA to 1A
Note 1:
2:
The integrated MOSFET switches have an integral diode from the LX pin to VIN and from LX to PGND. In cases where
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to regulate the junction temperature for these cases.
UVLO is specified for a falling VIN. Once the UVLO is activated, the UVLO-HYS must be overcome before the device will
return to operation.
DS21921B-page 4
© 2005 Microchip Technology Inc.

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