DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MCP1623 查看數據表(PDF) - Microchip Technology

零件编号
产品描述 (功能)
生产厂家
MCP1623 Datasheet PDF : 30 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MCP1623/24
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
EN, FB, VIN, VSW, VOUT – GND ...............................................................................................................................+6.5V
EN, FB ...........................................................................................................<maximum of VOUT or VIN > (GND – 0.3V)
Output Short-Circuit Current ........................................................................................................................... Continuous
Power Dissipation ................................................................................................................................. Internally Limited
Storage Temperature ..............................................................................................................................-65°C to +150°C
Ambient Temperature with Power Applied ................................................................................................ -40°C to +85°C
Operating Junction Temperature.............................................................................................................-40°C to +125°C
ESD Protection on All Pins:
HBM............................................................................................................................................................. 3 kV
MM .............................................................................................................................................................. 300V
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V,
IOUT = 15 mA, TA = +25°C.
Boldface specifications apply over the TA range of -40°C to +85°C.
Parameters
Sym. Min.
Typ.
Max. Units
Conditions
Input Characteristics
Minimum Start-Up Voltage
Minimum Input Voltage after
Start-Up
VIN
0.65
0.8
V Note 1
VIN
0.35
V Note 1
Output Voltage Adjust Range
VOUT
2.0
Maximum Output Current
IOUT
50
Feedback Voltage
VFB
1.120
1.21
Feedback Input Bias Current
IVFB
10
Quiescent Current – PFM mode IQPFM
19
5.5
1.299
30
V VOUT VIN (Note 2)
mA 1.5V VIN, 3.3V VOUT
V
pA
µA Measured at VOUT = 4.0V;
EN = VIN, IOUT = 0 mA
(Note 3)
Quiescent Current – PWM mode IQPWM
220
Quiescent Current – Shutdown IQSHDN
0.7
µA Measured at VOUT; EN =
VIN IOUT = 0 mA (Note 3)
2.3
µA VOUT = EN = GND;
Includes N-Channel and
P-Channel switch leakage
NMOS Switch Leakage
INLK
0.3
µA VIN = VSW = 5V; VOUT =
5.5V VEN = VFB = GND
PMOS Switch Leakage
IPLK
0.05
µA VIN = VSW = GND;
VOUT = 5.5V
NMOS Switch ON Resistance RDS(ON)N
0.6
VIN = 3.3V, ISW = 100 mA
Note 1: 3.3 kresistive load, 3.3VOUT (1 mA).
2: For VIN > VOUT, VOUT will not remain in regulation.
3: IQ is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be
estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).
4: Peak current limit determined by characterization, not production tested
5: 220resistive load, 3.3VOUT (15 mA).
2010-2016 Microchip Technology Inc.
DS40001420D-page 3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]