MCP1631 查看數據表（PDF） - Microchip Technology
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MCP1631 Datasheet PDF : 34 Pages
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MCP1631/HV/MCP1631V/VHV
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VIN - GND (MCP1631/V)................................................+6.5V
VIN - GND (MCP1631HV/VHV)....................................+18.0V
All Other I/O ..............................(GND - 0.3V) to (VDD + 0.3V)
LX to GND............................................. -0.3V to (VDD + 0.3V)
VEXT Output Short Circuit Current ........................ Continuous
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ...................-40°C to +150°C
Operating Junction Temperature...................-40°C to +125°C
ESD Protection On All Pins:
HBM ................................................................................. 4 kV
MM ..................................................................................400V
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums.
Parameters
Sym
Min
Typ
Max Units
Conditions
Input Characteristics
Input Voltage (MCP1631/V)
Input Voltage
(MCP1631HV/VHV)
VDD
3.0
—
5.5
V Non-HV Options
VDD
3.5
—
16.0
V HV Options (Note 2)
Undervoltage Lockout
(MCP1631/V)
UVLO
2.7
2.8
3.0
V VIN Falling, VEXT low when input
below UVLO threshold
Undervoltage Lockout Hysteresis UVLO_HYS
40
(MCP1631/MCP1631V)
64
100
mV UVLO Hysteresis
Input Quiescent Current
I(VIN)
—
3.7
5
mA SHDN = VDD =OSCDIS
(MCP1631/V, MCP1631HV,VHV)
Shutdown Current
I_AVDD for MCP1631/V
I_VIN for MCP1631HV/VHV
IIN_SHDN
—
SHDN = GND =OSCDIS,
2.4
12
µA Note: Amplifier A3 remains
4.4
17
µA powered during Shutdown.
OSCIN, OSCDIS and SHDN Input Levels
Low Level Input Voltage
VIL
High Level Input Voltage
VIH
Input Leakage Current
ILEAK
External Oscillator Range
FOSC
—
—
0.8
V
2.0
—
—
V
0.005
1
µA
—
—
2
MHz Maximum operating frequency is
dependent upon circuit topology
and duty cycle.
Minimum Oscillator High Time
TOH_MIN.
—
Minimum Oscillator Low Time
TOL_MIN.
10
—
ns
Oscillator Rise and Fall Time
TR and TF
0.01
—
10
µs Note 1
Oscillator Input Capacitance
COSC
—
5
—
pf
Note 1: External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
2: The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater.
© 2008 Microchip Technology Inc.
DS22063B-page 5
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