MCP1631 查看數據表（PDF） - Microchip Technology

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MCP1631

High-Speed, Pulse Width Modulator

Microchip Technology 

MCP1631/HV/MCP1631V/VHV

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,

VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums.

Parameters

Sym

Min

Typ

Max Units

Conditions

VS Amplifier PSRR

Common Mode Input Range

Closed-loop Voltage Gain

PSRR

VCM

A3VCL

Low-level Output

VS Amplifier Sink Current

VS Amplifier Source Current

Peak Current Sense Input (C1)

VOL

ISINK

ISOURCE

—

GND

—

—

1

-2

65

—

dB VIN = 3.0V to 5.0V, VCM = 1.2V

—

AVDD

V Rail to Rail Input

1

—

V/V RL = 5 kΩ to VIN/2,

100 mV < VEAOUT < VIN - 100 mV,

VCM = 1.2V

38

GND + 85 mV RL = 5 kΩ to VIN/2

5

—

mA

-5

—

mA

Maximum Current Sense Signal

MCP1631/MCP1631HV

VCS_MAX

0.85

0.9

0.98

V

Maximum Ramp Signal

MCP1631V/MCP1631VHV

VRAMP

2.7

Current Sense Input Bias Current

ICS_B

—

Delay From CS to VEXT

MCP1631

TCS_VEXT

—

2.78

-0.1

8.5

2.9

V VIN > 4V

Maximum CS input range limited

by comparator input common

mode range. VCS_MAX = VIN-1.4V

—

µA VIN = 5V

25

ns Note 1

Minimum Duty Cycle

DCMIN

—

Overvoltage Sense Comparator (C2)

—

0

% VFB = VREF + 0.1V,

VCS = GND

OV Reference Voltage High

OV Reference Voltage Low

OV Hysteresis

OV_VREF_H

OV_VREF_L

OV_HYS

—

1.15

—

1.23

—

V

1.18

1.23

V

50

—

mV Overvoltage Comparator

Hysteresis

OV_IN Bias Current

Delay From OV to VEXT

OV_IBIAS

—

TOV_VEXT

—

0.001

1

µA

63

150

ns Delay from OV detection to PWM

termination (Note 1)

OV Input Capacitance

C_OV

—

5

Internal Regulator HV Options Input / Output Characteristics

—

pF

Input Operating Voltage

Maximum Output Current

Output Short Circuit Current

VIN

3.5

IOUT_mA

250

IOUT_SC

—

—

16.0

V Note 2

—

—

mA

400

—

mA VIN = VIN(MIN) (Note 2),

VOUT = GND,

Current (average current)

measured 10 ms after short is

applied.

Output Voltage Regulation

VOUT Temperature Coefficient

VOUT

TCVOUT

VR-3.0%

—

VR±0.4% VR+3.0%

50

150

V

ppm/

°C

VR = 3.3V or 5.0V

Note 3

Note 1:

2:

3:

4:

5:

External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device

characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%

of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and

specified that are not production tested.

The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).

TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the

temperature range. VOUT-LOW = lowest voltage measured over the temperature range.

Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCVOUT.

Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater.

© 2008 Microchip Technology Inc.

DS22063B-page 7

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