MCP1640(2015) 查看數據表（PDF） - Microchip Technology

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MCP1640
(Rev.:2015)

0.65V Start-Up Synchronous Boost Regulator with True Output Disconnect or Input/Output Bypass Option

Microchip Technology 

MCP1640/B/C/D

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

EN, VFB, VIN, VSW, VOUT - GND ......................... +6.5V

EN, VFB ....<maximum of VOUT or VIN > (GND – 0.3V)

Output Short-Circuit Current ...................... Continuous

Output Current Bypass Mode........................... 400 mA

Power Dissipation ............................ Internally Limited

Storage Temperature ......................... -65°C to +150°C

Ambient Temp. with Power Applied...... -40°C to +85°C

Operating Junction Temperature........ -40°C to +125°C

ESD Protection On All Pins:

HBM........................................................ 3 kV

MM......................................................... 300V

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated in the operational sections of this

specification is not intended. Exposure to maximum

rating conditions for extended periods may affect

device reliability.

DC CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V,

IOUT = 15 mA, TA = +25°C. Boldface specifications apply over the TA range of -40°C to +85°C.

Parameters

Sym.

Min. Typ. Max. Units

Conditions

Input Characteristics

Minimum Start-Up Voltage

Minimum Input Voltage After

Start-Up

VIN

—

0.65

0.8

V Note 1

VIN

— 0.35

—

V Note 1

Output Voltage Adjust Range

Maximum Output Current

Feedback Voltage

Feedback Input Bias Current

Quiescent Current – PFM

Mode

VOUT

IOUT

VFB

IVFB

IQPFM

2.0

—

150

—

150

—

350

1.175 1.21

—

10

—

19

5.5

—

—

—

1.245

—

30

V VOUT  VIN; Note 2

mA 1.2V VIN, 2.0V VOUT

mA 1.5V VIN, 3.3V VOUT

mA 3.3V VIN, 5.0V VOUT

V

pA

µA Measured at VOUT = 4.0V;

EN = VIN, IOUT = 0 mA;

Note 3

Quiescent Current – PWM

Mode

IQPWM

—

220

—

µA Measured at VOUT = 4.0V;

EN = VIN, IOUT = 0 mA;

Note 3

Quiescent Current – Shutdown

IQSHDN

—

0.7

2.3

µA VOUT = EN = GND;

Includes N-Channel and

P-Channel Switch Leakage

NMOS Switch Leakage

INLK

—

0.3

—

µA VIN = VSW = 5V;

VOUT = 5.5V

VEN = VFB = GND

PMOS Switch Leakage

IPLK

— 0.05

—

µA VIN = VSW = GND;

VOUT = 5.5V

Note 1: 3.3 k resistive load, 3.3VOUT (1 mA).

2: For VIN > VOUT, VOUT will not remain in regulation.

3: IQOUT is measured at VOUT; VOUT is externally supplied with a voltage higher than the nominal 3.3V output

(device is not switching); no load; VIN quiescent current will vary with boost ratio. VIN quiescent current

can be estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).

4: Peak current limit determined by characterization, not production tested.

5: 220 resistive load, 3.3VOUT (15 mA).

 2010-2015 Microchip Technology Inc.

DS20002234D-page 3

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