MCP1640/B/C/D
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V,
IOUT = 15 mA, TA = +25°C. Boldface specifications apply over the TA range of -40°C to +85°C.
Parameters
Sym.
Min. Typ. Max. Units
Conditions
NMOS Switch On Resistance
RDS(ON)N
—
0.6
—
VIN = 3.3V, ISW = 100 mA
PMOS Switch On Resistance
RDS(ON)P
—
0.9
—
VIN = 3.3V, ISW = 100 mA
NMOS Peak Switch Current
Limit
IN(MAX)
600 850
—
mA Note 4
VOUT Accuracy
Line Regulation
Load Regulation
Maximum Duty Cycle
Switching Frequency
EN Input Logic High
EN Input Logic Low
EN Input Leakage Current
Soft-Start Time
Thermal Shutdown Die
Temperature
VOUT%
-3
—
VOUT/VOUT) -1
/VIN|
VOUT/VOUT| -1
0.01
0.01
DCMAX
fSW
VIH
VIL
IENLK
tSS
88
90
425 500
90
—
—
—
— 0.005
—
750
TSD
—
150
+3
% Includes Line and Load
Regulation; VIN = 1.5V
1
%/V VIN = 1.5V to 3V
IOUT = 25 mA
1
% IOUT = 25 mA to 100 mA;
VIN = 1.5V
—
%
575
kHz
— %of VIN IOUT = 1 mA
20 %of VIN IOUT = 1 mA
—
µA VEN = 5V
—
µS EN Low-to-High,
90% of VOUT; Note 5
—
C
Die Temperature Hysteresis
TSDHYS
—
10
—
C
Note 1: 3.3 k resistive load, 3.3VOUT (1 mA).
2: For VIN > VOUT, VOUT will not remain in regulation.
3: IQOUT is measured at VOUT; VOUT is externally supplied with a voltage higher than the nominal 3.3V output
(device is not switching); no load; VIN quiescent current will vary with boost ratio. VIN quiescent current
can be estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).
4: Peak current limit determined by characterization, not production tested.
5: 220 resistive load, 3.3VOUT (15 mA).
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V, IOUT = 15 mA.
Parameters
Sym. Min. Typ.
Max. Units
Conditions
Temperature Ranges
Operating Junction Temperature
TJ
Range
Storage Temperature Range
TA
Maximum Junction Temperature
TJ
Package Thermal Resistances
Thermal Resistance, 6LD-SOT-23
JA
Thermal Resistance, 8LD-2x3 DFN JA
-40
—
+125
°C Steady State
-65
—
+150
°C
—
—
+150
°C Transient
— 190.5
—
75
—
°C/W
—
°C/W
DS20002234D-page 4
2010-2015 Microchip Technology Inc.