MCP1651 查看數據表（PDF） - Microchip Technology
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MCP1651 Datasheet PDF : 30 Pages
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MCP1650/51/52/53
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VIN TO GND........................................................... 6.0V
CS,FB,LBI,LBO,SHDN,PG,EXT ............ GND – 0.3V to
VIN + 0.3V
Current at EXT pin ................................................ ±1A
Storage temperature .......................... -65°C to +150°C
Operating Junction Temperature........ -40°C to +125°C
ESD protection on all pins 4 kV HBM
† Notice: Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply at VIN = +2.7V to +5.5V, SHDN = High,
TJ = -40°C to +125°C. Typical values apply for VIN = 3.3V, TA +25°C.
Parameters
Sym
Min Typ Max Units
Conditions
Input Characteristics
Supply Voltage
Undervoltage Lockout
(S Option)
Under Voltage Lockout
(R Option)
Undervoltage Hysteresis
Shutdown Supply Current
Quiescent Supply Current
Soft Start Time
Feedback Characteristics
Feedback Voltage
Feedback Comparator
Hysteresis
Feedback Input Bias Current
Current Sense Input
Current Sense Threshold
Delay from Current Sense to
Output
Ext Drive
EXT Driver ON Resistance
(High Side)
EXT Driver ON Resistance
(Low Side)
Oscillator Characteristics
Switching Frequency
Low Duty Cycle Switch-Over
Voltage
Duty Cycle Switch Voltage
Hysteresis
Low Duty Cycle
High Duty Cycle
VIN
UVLO
2.7
—
5.5
2.4 2.55 2.7
UVLO
1.85 2.0 2.15
UVLOHYST —
117
—
ISHD
— 0.001 1
IQ
— 120 220
TSS
— 500 —
VFB
VHYS
IFBlk
1.18 1.22 1.26
—
12
23
-50
—
50
ISNS-TH
75 114 155
Tdly_ISNS
—
80
—
RHIGH
—
8
18
RLOW
—
4
12
FOSC
650 750 850
VLowDuty
—
3.8
—
DCHyst
—
92
—
DCLOW
50
56
62
DCHIGH
72
80
88
V
V VIN rising edge
V VIN rising edge
mV
µA SHDN = GND
µA EXT = Open
µs
V All conditions
mV
nA VFB < 1.3V
mV
ns
kHz
V VIN rising edge
mV
%
%
2004-2013 Microchip Technology Inc.
DS21876B-page 5
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