MCP1700T-1802E 查看數據表（PDF） - Microchip Technology
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MCP1700T-1802E Datasheet PDF : 24 Pages
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MCP1700
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDD ............................................................................................ +6.5V
All inputs and outputs w.r.t. .............(VSS-0.3V) to (VIN+0.3V)
Peak Output Current .................................... Internally Limited
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ................................... 150°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM;MM)............... ≥ 4 kV; ≥ 400V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input / Output Characteristics
Input Operating Voltage
Input Quiescent Current
Maximum Output Current
VIN
2.3
—
6.0
Iq
—
1.6
4
IOUT_mA
250
—
—
200
—
—
Output Short Circuit Current
IOUT_SC
—
408
—
V
Note 1
µA
IL = 0 mA, VIN = VR +1V
mA
For VR ≥ 2.5V
For VR < 2.5V
mA
VIN = VR + V, VOUT = GND,
Current (peak current) measured
10 ms after short is applied.
Output Voltage Regulation
VOUT
VOUT Temperature Coefficient
Line Regulation
Load Regulation
TCVOUT
ΔVOUT/
(VOUTXΔVIN)
ΔVOUT/VOUT
VR-3.0%
VR-2.0%
—
-1.0
-1.5
VR±0.4
%
50
±0.75
±1.0
VR+3.0%
VR+2.0%
—
+1.0
+1.5
V
Note 2
ppm/°C Note 3
%/V (VR+1)V ≤ VIN ≤ 6V
%
IL = 0.1 mA to 250 mA for VR ≥ 2.5V
IL = 0.1 mA to 200 mA for VR < 2.5V
Note 4
Dropout Voltage
VR > 2.5V
VIN-VOUT
—
178
350
mV
IL = 250 mA, (Note 1, Note 5)
Dropout Voltage
VR < 2.5V
VIN-VOUT
—
150
350
mV
IL = 200 mA, (Note 1, Note 5)
Output Rise Time
Output Noise
TR
—
500
—
µs
10% VR to 90% VR VIN = 0V to 6V,
RL = 50Ω resistive
eN
—
3
—
µV/(Hz)1/2 IL = 100 mA, f = 1 kHz, COUT = 1 µF
Note 1:
2:
3:
4:
The minimum VIN must meet two conditions: VIN ≥ 2.3V and VIN ≥ (VR + 3.0%) +VDROPOUT.
VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage (VIN = VR + 1.0V); IOUT = 100 µA.
TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a VR + 1V differential applied.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
© 2007 Microchip Technology Inc.
DS21826B-page 3
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