MCP1700T-1802EMB 查看數據表（PDF） - Microchip Technology

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MCP1700T-1802EMB

Low Quiescent Current LDO

Microchip Technology 

MCP1700

DC CHARACTERISTICS (CONTINUED)

Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1, ILOAD = 100 µA,

COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.

Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Power Supply Ripple

Rejection Ratio

PSRR

—

44

—

dB

f = 100 Hz, COUT = 1 µF, IL = 50 mA,

VINAC = 100 mV pk-pk, CIN = 0 µF,

VR = 1.2V

Thermal Shutdown Protection

TSD

—

140

—

°C

VIN = VR + 1, IL = 100 µA

Note 1:

2:

3:

4:

The minimum VIN must meet two conditions: VIN ≥ 2.3V and VIN ≥ (VR + 3.0%) +VDROPOUT.

VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The

input voltage (VIN = VR + 1.0V); IOUT = 100 µA.

TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the

temperature range. VOUT-LOW = lowest voltage measured over the temperature range.

Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCVOUT.

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with a VR + 1V differential applied.

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

junction temperatures above 150°C can impact the device reliability.

7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the

ambient temperature is not significant.

TEMPERATURE SPECIFICATIONS

Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1, ILOAD = 100 µA,

COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.

Boldface type applies for junction temperatures, TJ (Note 1) of -40°C to +125°C.

Parameters

Sym

Min

Typ

Max Units

Conditions

Temperature Ranges

Specified Temperature Range

Operating Temperature Range

Storage Temperature Range

Thermal Package Resistance

TA

-40

TA

-40

TA

-65

+125 °C

+125 °C

+150 °C

Thermal Resistance, SOT-23

θJA

—

336

—

°C/W

Minimum Trace Width Single Layer

Board

—

230

— °C/W Typical FR4 4-layer Application

Thermal Resistance, SOT-89

Thermal Resistance, TO-92

θJA

—

52

— °C/W Typical, 1 square inch of copper

θJA

—

131.9

—

°C/W

EIA/JEDEC JESD51-751-7

4-Layer Board

Note 1:

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

junction temperatures above 150°C can impact the device reliability.

DS21826B-page 4

© 2007 Microchip Technology Inc.

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