MCP6021R 查看數據表（PDF） - Microchip Technology
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MCP6021R Datasheet PDF : 42 Pages
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MCP6021/1R/2/3/4
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, RL = 10 kΩ to VDD/2 and CL = 60 pF.
Parameters
Sym
Min
Typ
Max Units
Conditions
Power Supply
Supply Voltage
Quiescent Current per Amplifier
AC Response
VDD
2.5
IQ
0.5
—
5.5
V
1.0
1.35
mA IO = 0
Gain Bandwidth Product
GBWP —
10
—
MHz
Phase Margin
PM
—
65
—
° G = +1 V/V
Settling Time, 0.2%
Slew Rate
tSETTLE
—
250
—
ns G = +1 V/V, VOUT = 100 mVp-p
SR
—
7.0
—
V/µs
Total Harmonic Distortion Plus Noise
f = 1 kHz, G = +1 V/V
THD+N — 0.00053 —
f = 1 kHz, G = +1 V/V, RL = 600Ω THD+N — 0.00064 —
f = 1 kHz, G = +1 V/V
f = 1 kHz, G = +10 V/V
f = 1 kHz, G = +100 V/V
Noise
THD+N — 0.0014 —
THD+N — 0.0009 —
THD+N —
0.005
—
% VOUT = 0.25V to 3.25V (1.75V ± 1.50VPK),
VDD = 5.0V, BW = 22 kHz
% VOUT = 0.25V to 3.25V (1.75V ± 1.50VPK),
VDD = 5.0V, BW = 22 kHz
% VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz
% VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz
% VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Eni
—
2.9
—
µVp-p f = 0.1 Hz to 10 Hz
eni
—
8.7
— nV/√Hz f = 10 kHz
ini
—
3
— fA/√Hz f = 1 kHz
MCP6023 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, RL = 10 kΩ to VDD/2 and CL = 60 pF.
Parameters
Sym
Min Typ Max Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
Amplifier Output Leakage
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output High-Z Time
Hysteresis
VIL
VSS
— 0.2 VDD V
ICSL
-1.0 0.01 —
µA CS = VSS
VIH 0.8 VDD —
VDD
ICSH
— 0.01 2.0
ISS
-2 -0.05 —
IO(LEAK)
—
0.01
—
V
µA CS = VDD
µA CS = VDD
µA CS = VDD
tON
tOFF
VHYST
—
2
10
— 0.01 —
—
0.6
—
µs G = +1, VIN = VSS,
CS = 0.2VDD to VOUT = 0.45VDD time
µs G = +1, VIN = VSS,
CS = 0.8VDD to VOUT = 0.05VDD time
V VDD = 5.0V, Internal Switch
DS21685D-page 4
© 2009 Microchip Technology Inc.
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