MCP609 查看數據表（PDF） - Microchip Technology

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MCP609

2.5V to 5.5V Micropower CMOS Op Amps

Microchip Technology 

MCP606/7/8/9

AC CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, VDD = +2.5V to +5.5V, VSS = GND, TA = 25°C, VCM = VDD/2,

VOUT ≈ VDD/2, RL = 100 kΩ to VDD/2 and CL = 60 pF.

Parameters

Sym

Min

Typ

Max

Units

Conditions

AC Response

Gain Bandwidth Product

Phase Margin

Slew Rate

Noise

Input Noise Voltage

Input Noise Voltage Density

Input Noise Current Density

GBWP

PM

SR

Eni

eni

ini

—

155

—

62

—

0.08

—

2.8

—

38

—

3

—

kHz

—

°

G = +1

—

V/µs G = 1

—

µVP-P f = 0.1 Hz to 10 Hz

—

nV/√Hz f = 1 kHz

—

fA/√Hz f = 1 kHz

MCP608 CHIP SELECT (CS) CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, VDD = +2.5V to +5.5V, VSS = GND, TA = 25°C, VCM = VDD/2,

VOUT ≈ VDD/2, RL = 100 kΩ to VDD/2 and CL = 60 pF.

Parameters

Sym Min Typ Max Units

Conditions

CS Low Specifications

CS Logic Threshold, Low

CS Input Current, Low

CS High Specifications

CS Logic Threshold, High

CS Input Current, High

CS Input High, GND Current

Amplifier Output Leakage, CS High

CS Dynamic Specifications

CS Low to Amplifier Output Turn-on Time

CS High to Amplifier Output Hi-Z

CS Hysteresis

VIL

ICSL

VSS

— 0.2 VDD V

-0.1 0.01

—

µA CS = 0.2VDD

VIH 0.8 VDD —

VDD

ICSH

—

0.01

0.1

ISS

-2 -0.05 —

IO(LEAK)

—

10

—

V

µA CS = VDD

µA CS = VDD

nA CS = VDD

tON

—

tOFF

—

VHYST

—

9

100

0.1

—

0.6

—

µs CS = 0.2VDD to VOUT = 0.9(VDD/2),

G = +1 V/V, RL = 1 kΩ to VSS

µs CS = 0.8VDD to VOUT = 0.1(VDD/2),

G = +1 V/V, RL = 1 kΩ to VSS

V VDD = 5.0V

CS

VOUT

VIL

tON

Hi-Z

VIH

tOFF

Hi-Z

ISS -50 nA (typ.) -18.7 µA (typ.) -50 nA (typ.)

ICS -50 nA (typ.)

-50 nA (typ.)

FIGURE 1-1:

Timing Diagram for the CS

Pin on the MCP608.

© 2005 Microchip Technology Inc.

DS11177D-page 3

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