MCP617 查看數據表（PDF） - Microchip Technology
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MCP617 Datasheet PDF : 38 Pages
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MCP616/7/8/9
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +2.3V to +5.5V, VSS = GND, TA = 25°C, VCM = VDD/2, VOUT ≈ VDD/2,
RL = 100 kΩ to VDD/2 and CL = 60 pF.
Parameters
Sym Min Typ Max Units
Conditions
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
GBWP
—
190
—
PM
—
57
—
SR
—
0.08
—
Eni
—
2.2
—
eni
—
32
—
ini
—
70
—
kHz
°
V/µs
G = +1V/V
µVP-P
nV/√Hz
fA/√Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
MCP618 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +2.3V to +5.5V, VSS = GND, TA = 25°C, VCM = VDD/2, VOUT ≈ VDD/2,
RL = 100 kΩ to VDD/2 and CL = 60 pF.
Parameters
Sym Min Typ Max Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
Amplifier Output Leakage
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output High-Z
CS Hysteresis
VIL
VSS
— 0.2 VDD V
ICSL
–1.0 0.01 —
µA CS = VSS
VIH 0.8 VDD —
ICSH
— 0.01
ISS
-2 -0.05
IO(LEAK)
—
10
VDD
2
—
—
V
µA CS = VDD
µA CS = VDD
nA CS = VDD
tON
—
tOFF
—
VHYST
—
9
100
0.1
—
0.6
—
µs CS = 0.2VDD to VOUT = 0.9VDD/2,
G = +1 V/V, RL = 1 kΩ to VSS
µs CS = 0.8VDD to VOUT = 0.1VDD/2,
G = +1 V/V, RL = 1 kΩ to VSS
V VDD = 5.0V
CS
VOUT
VIL
tON
High-Z
ISS -50 nA
(typical)
VIH
tOFF
-19 µA
(typical)
High-Z
-50 nA
(typical)
ICS 10 nA
(typical)
10 nA
(typical)
FIGURE 1-1:
Timing Diagram for the CS
Pin on the MCP618.
DS21613C-page 4
© 2008 Microchip Technology Inc.
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