MCP617 查看數據表（PDF） - Microchip Technology

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MCP617

2.3V to 5.5V Micropower Bi-CMOS Op Amps

Microchip Technology 

MCP616/7/8/9

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD = +2.3V to +5.5V and VSS = GND.

Parameters

Sym Min Typ Max Units

Conditions

Temperature Ranges

Specified Temperature Range

Operating Temperature Range

Storage Temperature Range

Thermal Package Resistances

TA

-40 —

+85

TA

-40 — +125

TA

-65 — +150

°C

°C Note 1

°C

Thermal Resistance, 8L-MSOP

θJA

— 211

—

°C/W

Thermal Resistance, 8L-PDIP

θJA

— 89.3 —

°C/W

Thermal Resistance, 8L-SOIC

θJA

— 149.5 —

°C/W

Thermal Resistance, 14L-PDIP

θJA

—

70

—

°C/W

Thermal Resistance, 14L-SOIC

θJA

— 95.3 —

°C/W

Thermal Resistance, 14L-TSSOP

θJA

— 100

—

°C/W

Note 1: The MCP616/7/8/9 operate over this extended temperature range, but with reduced performance. In any case, the

Junction Temperature (TJ) must not exceed the Absolute Maximum specification of +150°C.

1.1 Test Circuits

The test circuits used for the DC and AC tests are

shown in Figure 1-2 and Figure 1-3. The bypass

capacitors are laid out according to the rules discussed

in Section 4.6 “Supply Bypass”.

VIN

RN

VDD/2 RG

VDD 0.1 µF 1 µF

MCP61X

RF

VOUT

CL RL

VL

FIGURE 1-2:

AC and DC Test Circuit for

Most Non-Inverting Gain Conditions.

VDD/2

RN

VIN RG

VDD 0.1 µF 1 µF

MCP61X

RF

VOUT

CL RL

VL

FIGURE 1-3:

AC and DC Test Circuit for

Most Inverting Gain Conditions.

© 2008 Microchip Technology Inc.

DS21613C-page 5

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