MCR12L(2008) 查看數據表（PDF） - ON Semiconductor
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MCR12L Datasheet PDF : 6 Pages
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MCR12LD, MCR12LM,
MCR12LN
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half−wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
• Blocking Voltage to 800 Volts
• On−State Current Rating of 12 Amperes RMS at 80°C
• High Surge Current Capability − 100 Amperes
• Rugged, Economical TO−220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
• High Immunity to dv/dt − 100 V/msec Minimum at 125°C
• Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1) VDRM,
V
(TJ = −40 to 125°C, Sine Wave,
VRRM
50 to 60 Hz, Gate Open)
MCR12LD
400
MCR12LM
600
MCR12LN
800
On-State RMS Current
IT(RMS)
12
A
(180° Conduction Angles; TC = 80°C)
Average On-State Current
(180° Conduction Angles; TC = 80°C)
IT(AV)
7.6
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
100
A
41
A2sec
Forward Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 80°C)
PGM
5.0
W
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, TC = 80°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to 125 °C
Storage Temperature Range
Tstg −40 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
1
October, 2008 − Rev. 3
http://onsemi.com
SCRs
12 AMPERES RMS
400 thru 800 VOLTS
G
A
K
MARKING
DIAGRAM
123
TO−220AB
CASE 221A−09
STYLE 3
AY WW
MCR12LxG
AKA
A
Y
WW
x
G
AKA
= Assembly Location
= Year
= Work Week
= D, M, or N
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR12LD
MCR12LDG
MCR12LM
MCR12LMG
MCR12LN
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
MCR12LNG
TO−220AB
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR12L/D
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